Solid State (Qty 500) MULTICOMP 2N1711 Bipolar (BJT) Single Transistor, NPN, 50 V, 70 MHz, 800 mW, 500 mA, 300 hFE

Description

The 2N1711 is a NPN silicon Transistor for amplifier and switching applications. This device features high breakdown voltage, low leakage current, low capacity and beta useful over an extremely wide current range. 75V Collector-Base Voltage 7V Emitter-Base Voltage 0.5A Continuous Collector Current. Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 50V Transition Frequency ft: 70MHz Power Dissipation Pd: 800mW DC Collector Current: 500mA DC Current Gain hFE: 300hFE Transistor Case Style: TO-39 No. of Pins: 3Pins Operating Temperature Max: 200°C